Performance of W-InSb Metal-Semiconductor Point-Contact Diodes as Detectors and Mixers in the Near Infrared

被引：0
|
作者：
Alessandro Bertolini
Giorgio Carelli
Augusto Moretti
Giovanni Moruzzi
机构：
[1] dell'Università di Pisa and INFM,Dipartimento di Fisica, n“Enrico Fermi”
来源：
International Journal of Infrared and Millimeter Waves | 2001年 / 22卷
关键词：
Schottky diodes; infrared spectroscopy; molecular lasers; submillimeter-wave lasers;
D O I：
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中图分类号：
学科分类号：
摘要：
Metal-Insulator-Metal (MIM) and Schottky-barrier diodes have been used extensively in the past years as harmonic generators and mixers for frequency measurements in the spectral range from the far-infrared to the visible. MIM diodes present a very low fabrication cost and are easy to handle, while Schottky diodes are mechanically more stable and long-lived. In the present work we discuss the performance of a metal-semiconductor point-contact diode for the radiation around 1 μm. This device, which may be viewed as a hybrid between a MIM and a Schottky diode, combines the simplicity and easiness of fabrication of the MIM diode with the stability and the long contact life typical of the Schottky diode. It proved to be very efficient even for visible light.
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页码：1761 / 1768
页数：7
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  • [1] Performance of W-InSb metal-semiconductor point-contact diodes as detectors and mixers in the near infrared
    Bertolini, A
    Carelli, G
    Moretti, A
    Moruzzi, G
    [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2001, 22 (12): : 1761 - 1768
  • [2] Measurements of near-infrared frequency mixing by metal-semiconductor point-contact diodes
    Bava, E
    Beverini, N
    Carelli, G
    De Michele, A
    Galzerano, G
    Maccioni, E
    Moretti, A
    Prevedelli, M
    Sorrentino, F
    Svelto, C
    [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2005, 54 (04) : 1407 - 1411
  • [3] GaSb and InAs: New Materials for Metal-Semiconductor Point-Contact Diodes
    G. Carelli
    A. De Michele
    M. Finotti
    K. Bousbahi
    N. Ioli
    A. Moretti
    [J]. International Journal of Infrared and Millimeter Waves, 2003, 24 : 799 - 811
  • [4] GaSb and InAs: New materials for metal-semiconductor point-contact diodes
    Carelli, G
    De Michele, A
    Finotti, M
    Bousbahi, K
    Ioli, N
    Moretti, A
    [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2003, 24 (05): : 799 - 811
  • [5] Characterization of metal-semiconductor point-contact diodes around 1.55 μm for optical-fiber communications
    Beverini, N
    Carelli, G
    Ciaramella, E
    Contestabile, G
    De Michele, A
    Presi, M
    [J]. LASER PHYSICS, 2005, 15 (09) : 1334 - 1337
  • [6] PROPERTIES AND BIAS DEPENDENCE OF METAL-INSULATOR-METAL POINT-CONTACT DIODES AS HARMONIC MIXERS IN THE MID-INFRARED
    KLINGENBERG, HH
    [J]. APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1985, 37 (03): : 145 - 149
  • [7] PROPERTIES AND BIAS DEPENDENCE OF METAL-INSULATOR-METAL POINT-CONTACT DIODES AS HARMONIC MIXERS IN THE MID-INFRARED.
    Klingenberg, H.H.
    [J]. Applied physics. B, Photophysics and laser chemistry, 1985, B37 (03): : 145 - 149
  • [8] Detection and Mixing Properties of an InSb Metal-Semiconductor Point Contact Diode
    A. Bertolini
    G. Carelli
    C. A. Massa
    A. Moretti
    F. Strumia
    [J]. International Journal of Infrared and Millimeter Waves, 1999, 20 : 1121 - 1127
  • [9] Detection and mixing properties of an InSb metal-semiconductor point contact diode
    Bertolini, A
    Carelli, G
    Massa, CA
    Moretti, A
    Strumia, F
    [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 20 (06): : 1121 - 1127
  • [10] MIXING OF SUBMILLIMETER WAVE RADIATION IN METAL-METAL AND METAL-SEMICONDUCTOR POINT CONTACT DIODES
    EPTON, PJ
    WILSON, WL
    TITTEL, FK
    RABSON, TA
    [J]. INFRARED PHYSICS, 1979, 19 (3-4): : 335 - 340
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