GaSb and InAs: New Materials for Metal-Semiconductor Point-Contact Diodes

被引：0
|
作者：
G. Carelli
A. De Michele
M. Finotti
K. Bousbahi
N. Ioli
A. Moretti
机构：
[1] INFM,Dipartimento di Fisica and
[2] IPCF-CNR,Dipartimento di Fisica and INFM
来源：
International Journal of Infrared and Millimeter Waves | 2003年 / 24卷
关键词：
semiconductors; detectors; mixers; point-contact diode;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Metal-semiconductor point contact diodes have proved to be good detectors and mixers for radiation from the far-infrared to visible. Until now GaAs, InSb and InP are the most studied and used semiconductor materials for these devices. In this work we present the performance in the visible and infrared region for metal-semiconductor point-contact diodes with GaSb or InAs as the semiconductor layers. These two new materials have shown good characteristics.
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收藏
页码：799 / 811
页数：12
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