Measurements of near-infrared frequency mixing by metal-semiconductor point-contact diodes

被引：5
|
作者：
Bava, E [1 ]
Beverini, N
Carelli, G
De Michele, A
Galzerano, G
Maccioni, E
Moretti, A
Prevedelli, M
Sorrentino, F
Svelto, C
机构：
[1] Politecn Milan, INFM, I-20133 Milan, Italy
[2] Politecn Milan, Ist Elettron & Ingn Informat & Telecomunicaz, CNR, Dept Elettron & Informat, I-20133 Milan, Italy
[3] Univ Pisa, Dept Phys, I-56127 Pisa, Italy
[4] INFM, I-56127 Pisa, Italy
[5] European Lab Nonlinear Spect LENS, I-50019 Florence, Italy
[6] Politecn Milan, IFN, CNR, Dept Phys, I-20133 Milan, Italy
[7] CNR, IPCF, I-56124 Pisa, Italy
[8] Univ Bologna, Dept Phys Chem, I-40136 Bologna, Italy
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2005年 / 54卷 / 04期
关键词：
diode laser; frequency measurement; near-infrared; optical mixer; phase-lock;
D O I：
10.1109/TIM.2005.851061
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performances of metal-semiconductor point-contact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart.
引用
收藏
页码：1407 / 1411
页数：5
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