Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti-parallel Schottky barrier diodes

For a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET), both the body diode of the MOSFET and an anti-parallel diode can function as a freewheeling diode that carries reverse current. Selecting a suitable freewheeling method is particularly important to fully exploit the performance of high-voltage SiC MOSFET devices. In this study, based on the 6.5 kV SiC MOSFET and the Schottky barrier diode (SBD) developed by our research group, the dynamic characteristics of the MOSFET body diode, the SBD, and the parallel connection of the two are investigated. In addition, the influence of capacitive current on the dynamic characteristics is analyzed by establishing an equivalent circuit model. Test results show that when compared with the body diode, the SBD has an extremely low reverse recovery current, a lower capacitive current, and better reverse recovery temperature stability. Thus, the SBD is regarded as the most suitable freewheeling diode for the 6.5 kV SiC MOSFET. Finally, a package solution for the 6.5 kV SiC MOSFET and SBD is proposed.