Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates

被引：0

作者：

I. I. Izhnin

K. D. Mynbaev

M. V. Yakushev

A. I. Izhnin

E. I. Fitsych

N. L. Bazhenov

A. V. Shilyaev

H. V. Savitskyy

R. Jakiela

A. V. Sorochkin

V. S. Varavin

S. A. Dvoretsky

机构：

[1] Lviv Scientific Research Institute of Materials of SRC “Carat”,Ioffe Physical

[2] Russian Academy of Sciences,Technical Institute

[3] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch

[4] Franko National University,Institute of Physics

[5] Polish Academy of Sciences,undefined

来源：

Semiconductors | 2012年 / 46卷

关键词：

ZnTe; CdHgTe; Residual Donor; Heteroepitaxial Structure; Mercury Vacancy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied. The results of photoluminescence measurements are indicative of the high structural perfection of the films, and Hall data combined with low-energy ion treatment point to a low concentration of residual donors (∼5 × 1014 cm−3). Acceptor states supposedly related to the capture of impurities at structural defects typical of strongly lattice-mismatched heteroepitaxial structures are found in the films.

引用

页码：1341 / 1345

页数：4

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