ELECTRICAL AND OPTICAL-PROPERTIES OF INDIUM ARSENIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引:0
|
作者
BZINKOVSKAYA, IS
KANTER, YO
KOLOSANOV, VA
REVENKO, MA
FEDOROV, AA
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:585 / 588
页数:4
相关论文
共 50 条
  • [1] IMPROVEMENTS OF ELECTRICAL AND OPTICAL-PROPERTIES OF INALAS GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAMURA, Y
    NAKASHIMA, K
    ASAHI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3262 - 3264
  • [2] Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy
    Polyakov, AY
    Govorkov, AV
    Smirnov, NB
    Pashkova, NY
    Thaler, GT
    Overberg, ME
    Frazier, R
    Abernathy, CR
    Pearton, SJ
    Kim, J
    Ren, F
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 4989 - 4993
  • [3] ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAMURA, Y
    ASAHI, H
    NAGAI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 841 - 846
  • [4] ELECTRICAL AND OPTICAL-PROPERTIES OF GAINASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    TAPPURA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) : 4565 - 4570
  • [5] ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING CRACKED PHOSPHINE
    CHOW, R
    CHAI, YG
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 383 - 385
  • [6] MOLECULAR-BEAM EPITAXY - SEMICONDUCTORS WITH TAILORED ELECTRICAL AND OPTICAL-PROPERTIES
    PLOOG, K
    [J]. UMSCHAU, 1984, 84 (13): : 413 - 416
  • [7] Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
    I. I. Izhnin
    K. D. Mynbaev
    M. V. Yakushev
    A. I. Izhnin
    E. I. Fitsych
    N. L. Bazhenov
    A. V. Shilyaev
    H. V. Savitskyy
    R. Jakiela
    A. V. Sorochkin
    V. S. Varavin
    S. A. Dvoretsky
    [J]. Semiconductors, 2012, 46 : 1341 - 1345
  • [8] Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
    Izhnin, I. I.
    Mynbaev, K. D.
    Yakushev, M. V.
    Izhnin, A. I.
    Fitsych, E. I.
    Bazhenov, N. L.
    Shilyaev, A. V.
    Savitskyy, H. V.
    Jakiela, R.
    Sorochkin, A. V.
    Varavin, V. S.
    Dvoretsky, S. A.
    [J]. SEMICONDUCTORS, 2012, 46 (10) : 1341 - 1345
  • [9] ELECTRICAL AND OPTICAL-PROPERTIES OF SI DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (311) SUBSTRATES
    TAKAMORI, T
    FUKUNAGA, T
    KOBAYASHI, J
    ISHIDA, K
    NAKASHIMA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07): : 1097 - 1101
  • [10] OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN ZNSE ON GAAS
    KARPINSKA, K
    SUCHOCKI, A
    GODLEWSKI, M
    HOMMEL, D
    [J]. ACTA PHYSICA POLONICA A, 1993, 84 (03) : 551 - 554