Properties of silicon layers grown by molecular-beam epitaxy

被引：3
|
作者：
Shengurov, VG
Svetlov, SP
Chalkov, VY
Gorshenin, GN
Shengurov, DV
Denisov, SA
机构：
[1] NI Lobachevskii State Univ, Res Physicotech Inst, Nizhnii Novgorod 603590, Russia
[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603590, Russia
来源：
INORGANIC MATERIALS | 2005年 / 41卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1007/s10789-005-0273-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon layers grown by molecular-beam epitaxy are studied. The unintentional doping level in the n-type layers is determined by Hall effect measurements. Low-temperature photoluminescence measurements attest to high quality of the layers. Using a phosphorus-doped silicon sublimation source, layers are grown in a broad range of doping levels.
引用
收藏
页码：1131 / 1134
页数：4
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