Ferroelectric Thin Films of Bismuth Strontium Tantalate Prepared by Alkoxide Route

被引：0
|
作者：
E.P. Turevskaya
V.B. Bergo
K.A. Vorotilov
A.S. Sigov
D. Benlian
机构：
[1] Moscow State University,Department of Chemistry
[2] Moscow State Institute of Radioengineering,Electronics and Automation (Technical University)
[3] Universite de Provence,Lab. de Chimie de Coordination
来源：
Journal of Sol-Gel Science and Technology | 1998年 / 13卷
关键词：
sol-gel method; alkoxides; films; bismuth;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Study of the interactions in Bi(OR)3-Ta(OR)5-ROH (R = Me, Et, iPr) at 20°C show that metal ethoxides are the best of the investigated precursors for the production of bismuth tantalates via alkoxides. Polycrystalline SrBi2Ta2O9 (SBTO) and BiTaO4 films on Si-SiO2-Ti-Pt substrates with thicknesses of 0.4–0.5 μm and 0.4 μm, respectively, have been formed by sol-gel processing. The most stable solutions for film application were obtained by using mixed-metal Bi-Ta ethoxides and solutions of Sr carboxylate (2-ethylhexanoic acid derivative) in 2-ethylhexanoic acid. Films annealed at 700–750°C for 30 min were single-phased. SBTO films demonstrated good ferroelectric properties: remanent polarization ranged from 3.5 to 4.0 μC/cm2 and coercive voltage 1.5–2.0 V, whereas BiTaO4 films showed dielectric behavior.
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页码：889 / 893
页数：4
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