Structural and electrical characterization of strontium bismuth tantalate (SBT) thin films

被引：4
|
作者：
O'Brien, S.
Crean, G. M.
Cakare, L.
Kosec, M.
机构：
[1] Natl Univ Ireland Univ Coll Cork, Tyndall Inst, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Dept Microelectron Engn, Cork, Ireland
[3] Inst Josef Stefan, SI-1000 Ljubljana, Slovenia
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 13期
关键词：
ferroelectric; SBT thin films; polarization;
D O I：
10.1016/j.apsusc.2005.07.131
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ferroelectric strontium bismuth tantalate (SBT) thin films were deposited by thermal metalorganic chemical vapour deposition (MOCVD) onto a complex layered Pt/IrO2/Ir/Ti(Al)N substrate. A study of ultra-violet (UV)-assisted rapid thermal processing (RTP) annealing strategies of the SBT thin films was performed. The influence of UV irradiation temperature and annealing atmosphere on the crystallinity of the deposited films was evaluated using both microstructural and electrical analysis techniques. A UV-RTP strategy in an oxygen atmosphere above 400 degrees C, followed by a furnace treatment at 700 degrees C, provided an optimum remnant polarization figure of merit. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：4497 / 4501
页数：5
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