Study on cat-CVD poly-Si films for solar cell application

被引：13
|
作者：
Iiduka, R [1 ]
Heya, A [1 ]
Matsumura, H [1 ]
机构：
[1] JAIST,TATSUNOKUCHI,ISHIKAWA 92312,JAPAN
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 48卷 / 1-4期
关键词：
catalytic CVD method; polycrystalline silicon; amorphous silicon;
D O I：
10.1016/S0927-0248(97)00112-8
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Feasibility of polycrystalline silicon (poly-Si) films deposited by catalytic CVD (cat-CVD) method as a solar cell material is studied. The poly-Si films are obtained at 300 degrees C by catalytic cracking reactions of a gaseous mixture of SiH4 and H-2 on a heated tungsten (W) wire. Present poly-Si films consist of both amorphous and polycrystalline phases. The mixing ratio of amorphous to polycrystalline phases can be controlled by deposition conditions. Because of both large optical absorption and relatively large mobility of carrier transport, a cat-CVD poly-Si film is a feasible candidate for solar cell material.
引用
收藏
页码：279 / 285
页数：7
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