Preparation of poly-Si films by Cat-CVD for thin film transistor

被引：3
|
作者：
Sunayama, H [1 ]
Yamada, K [1 ]
Karasawa, M [1 ]
Ishibashi, K [1 ]
机构：
[1] Anelva Corp, Fuchu, Tokyo 1838508, Japan
来源：
THIN SOLID FILMS | 2003年 / 430卷 / 1-2期
关键词：
Cat-CVD apparatus; poly-Si film; hot-wall; attenuated total reflection Fourier-transform infrared;
D O I：
10.1016/S0040-6090(03)00120-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline silicon (poly-Si) films have been deposited on low-temperature substrates using a hot-wall type catalytic chemical vapor deposition apparatus. Average grain size of the deposited poly-Si films was 10-20 nm. Hall mobility of 2-5 cm(2)V(-1)s(-1) was obtained even for a sample left at ambient conditions for a month. The influence of the sidewall temperature on poly-Si film properties has been investigated. The poly-Si films have been prepared under the hot/cold-wall conditions. Comparing crystalline fractions of both films measured by Raman spectroscopy, the difference was small. The crystalline fractions of 89 and 85% were obtained for the hot- and cold-wall conditions, respectively. As for the results of attenuated total reflection Fourier-transform infrared spectroscopy, a distinct difference between the two films was found, H and 0 atoms were more incorporated in the films deposited under the cold-wall conditions than in the films under the hot-wall conditions. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：226 / 229
页数：4
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