Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing

被引：15

作者：

Ohdaira, Keisuke ^{[1
]}

Shiba, Kazuhiro ^{[1
]}

Takemoto, Hiroyuki ^{[1
]}

Fujiwara, Tomoko ^{[1
]}

Endo, Yohei ^{[1
]}

Nishizaki, Shogo ^{[1
]}

Jang, Young Rae ^{[1
]}

Matsumura, Hideki ^{[1
]}

机构：

[1] JAIST, Nomi, Ishikawa 9231292, Japan

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 12期

关键词：

Catalytic CVD; Flash lamp annealing; Polycrystalline Si; Hydrogen content; Dehydrogenation; Glass substrate; Adhesion; Plasma-enhanced CVD; POLYCRYSTALLINE SILICON FILMS; AMORPHOUS-SILICON; SPECTROSCOPIC ELLIPSOMETRY; GRAIN NUCLEATION; DEPOSITION; CRYSTALLIZATION; EVOLUTION; HWCVD; PHASE;

D O I：

10.1016/j.tsf.2009.01.075

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA). The 2.0 mu m-thick a-Si films deposited by plasma-enhanced chemical vapor deposition (PECVD), containing 10% hydrogen, start to peel off even at a lamp irradiance lower than that required for crystallization, whereas a-Si films deposited by catalytic CVD (Cat-CVD) partially adhere even after crystallization. Dehydrogenated Cat-CVD a-Si films show much better adhesion to glass, and are converted to polycrystalline Si (poly-Si) without serious peeling, but are accompanied by the generation of crack-like structures. These facts demonstrate the superiority of as-deposited Cat-CVD a-Si films as a precursor material for micrometer-thick poly-Si formed by FLA. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3472 / 3475

页数：4

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