Ultralow-Power Complementary Metal-Oxide-Semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors

被引：0
|
作者：
Ma, R. M.
Peng, R. M.
Wen, X. N.
Dai, L. [1 ]
Liu, C.
Sun, T.
Xu, W. J.
Qin, G. G.
机构：
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Integrated Circuit; Field-Effect-Transistors; Schottky Barrier; Nanowires; Doping; ELECTRICAL-PROPERTIES; SURFACE PASSIVATION; BUILDING-BLOCKS; GE NANOWIRES; PERFORMANCE; TRANSPORT; DEVICES; HETEROSTRUCTURES; ELECTRONICS; CIRCUITS;
D O I：
10.1166/jnn.2010.2541
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.
引用
收藏
页码：6428 / 6431
页数：4
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