Probability distribution of threshold voltage fluctuations in metal-oxide-semiconductor field-effect-transistors

被引：2

作者：

Sano, N ^{[1
]}

Matsuzawa, K

Hiroki, A

Nakayama, N

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] STARC, Yokohama, Kanagawa 2220033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 5B期

关键词：

threshold voltage; MOSFET; fluctuation; random dopant; discrete impurities;

D O I：

10.1143/JJAP.41.L552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Analytical formulas associated with threshold voltage fluctuations in metal-oxide-semiconductor field-effect-transistors (MOSFETs) are systematically derived under the quasi one-dimensional approximation. The derivation of the formula for the threshold voltage variance clearly shows the approximations involved so that the limitation of the formula is clarified. Also, analytical expressions of the local threshold voltage probability distributions in the Substrate of MOSFETs, which give the detailed information of the microscopic distributions of the threshold voltage fluctuations, are derived.

引用

页码：L552 / L554

页数：3

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