Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

被引：31
|
作者：
Putra, Arifin Tamsir [1 ]
Nishida, Akio [2 ]
Kamohara, Shiro [2 ]
Hiramoto, Toshiro [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] MIRAI Selete, Tsukuba, Ibaraki 3058569, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 02期
关键词：
LINE; ROUGHNESS;
D O I：
10.1143/APEX.2.024501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A very rapid method of estimating the effect of gate-edge fluctuation on threshold voltage (V-th) variability in metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. An empirical model is developed, in which correlation width (W-c) from gate line-width roughness (LWR) is a key parameter of the model. The validity of the model is confirmed using the measured data and an autoregressive model. Wc is extracted from the gate line-edge shape depicted in a scanning electron microscope (SEM) image. This method is very useful for the intuitive understanding of the gate-edge fluctuation effect on V-th variability. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页数：3
相关论文
共 50 条
  • [1] On the threshold voltage of metal-oxide-semiconductor field-effect transistors
    Shi, XJ
    Wong, M
    SOLID-STATE ELECTRONICS, 2005, 49 (07) : 1179 - 1184
  • [2] Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Yang, Ji-Woon
    Park, Chang Seo
    Smith, Casey E.
    Adhikari, Hemant
    Huang, Jeff
    Heh, Dawei
    Majhi, Prashant
    Jammy, Raj
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [3] Polycrystalline silicon/metal stacked gate for threshold voltage control in metal-oxide-semiconductor field-effect transistors
    Polishchuk, I
    Hu, CM
    APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1938 - 1940
  • [4] A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation
    Li, Yiming
    Yu, Shao-Ming
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2006, 5 (2-3) : 125 - 129
  • [5] A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation
    Yiming Li
    Shao-Ming Yu
    Journal of Computational Electronics, 2006, 5 : 125 - 129
  • [6] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors
    Eriguchi, Koji
    Nakakubo, Yoshinori
    Matsuda, Asahiko
    Kamei, Masayuki
    Takao, Yoshinori
    Ono, Kouichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [7] Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Mei, Guanghui
    Hu, Guangxi
    Hu, Shuyan
    Gu, Jinglun
    Liu, Ran
    Tang, Tingao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
  • [8] Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Hu, Guang-Xi
    Liu, Ran
    Qiu, Zhi-Jun
    Wang, Ling-Li
    Tang, Ting-Ao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)
  • [9] Probability distribution of threshold voltage fluctuations in metal-oxide-semiconductor field-effect-transistors
    Sano, N
    Matsuzawa, K
    Hiroki, A
    Nakayama, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (5B): : L552 - L554
  • [10] Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal-Oxide-Semiconductor Field-Effect Transistors
    Putra, Arifin Tamsir
    Tsunomura, Takaaki
    Nishida, Akio
    Kamohara, Shiro
    Takeuchi, Kiyoshi
    Hiramoto, Toshiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06)
12345