10 W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC

被引:1
|
作者
Litchfield, Michael [1 ]
Dugas, Douglas [1 ]
机构
[1] BAE Syst, Fast Labs, Nashua, NH 03060 USA
关键词
D O I
10.1109/BCICTS50416.2021.9682477
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design and measured performance of two high power GaN MMIC PAs operating over 17 % bandwidth in the Ka-Band are presented. The two designs achieve 10W and 30W of output power from 32 GHz to 37GHz with a PAE greater than 20 % when operating at 24 V. The PAE of the 30W PA can be increased to nearly 30 % when the drain voltage is decreased down to 15 V. Comparisons of measured performance for the larger MMIC are made at 15V, 20V, and 24 V drain voltage, demonstrating a wide range of efficient operation from 32 GHz to 37 GHz.
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页数:4
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