GaN MMIC Amplifiers for W-band Transceivers

被引：0

作者：

Masuda, Satoshi ^{[1
]}

Ohki, Toshihiro ^{[1
]}

Makiyama, Kozo ^{[1
]}

Kanamura, Masahito ^{[1
]}

Okamoto, Naoya ^{[1
]}

Shigematsu, Hisao ^{[1
]}

Imanishi, Kenji ^{[1
]}

Kikkawa, Toshihide ^{[1
]}

Joshin, Kazukiyo ^{[1
]}

Hara, Naoki ^{[2
]}

机构：

[1] Fujitsu Ltd, 10-1 Morinosato Wakamiya, Kanagawa 2430197, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents W-band monolithic microwave integrated circuit (MMIC) amplifiers with grounded coplanar waveguide (GCPM) in 0.12 mu m GaN HEMT technology. A fabricated four-stage low-noise amplifier (LNA) exhibited a record gain of 23 dB at 76.5 GHz and a first reported noise figure (NF) of 3.8 dB at 80 GHz for any W-band GaN MMIC. Another MMIC power amplifier (PA) delivered an output power of 25.4 dBm at 76.5 GHz with continuous wave (CW) operation. To our knowledge, this is the first demonstration of GaN LNA as well as GaN MMICs with GCPW in the W-band. In addition, a practical design technique to prevent instability of the W-band MMIC is described.

引用

页码：1796 / +

页数：2

共 50 条

[1] GaN MMIC Amplifiers for W-band Transceivers
Masuda, Satoshi
Ohki, Toshihiro
Makiyama, Kozo
Kanamura, Masahito
Okamoto, Naoya
Shigematsu, Hisao
Imanishi, Kenji
Kikkawa, Toshihide
Joshin, Kazukiyo
Hara, Naoki
[J]. 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), 2009, : 443 - +
[2] W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon
Marti, Diego
Lugani, Lorenzo
Carlin, Jean-Francois
Malinverni, Marco
Grandjean, Nicolas
Bolognesi, C. R.
[J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (08) : 1025 - 1028
[3] W-Band, Broadband 2W GaN MMIC
Schellenberg, James
Kim, Bumjin
Phan, Trong
[J]. 2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,
[4] V- and W-band GaN MMIC Switches
Sonnenberg, Timothy
Romano, Tony
Verploegh, Shane
Popovic, Zoya
[J]. 2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 257 - 260
[5] W-band 3.4 W/mm GaN power amplifier MMIC
Ge, Qin
Xu, Bo
Tao, Hongqi
Wang, Weibo
Ma, Xiaohua
Guo, Fangjin
Liu, Yu
[J]. Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, 2020, 47 (01): : 24 - 29
[6] W-band InP/InGaAs/InP DHBT MMIC power amplifiers
Wei, Y
Lee, S
Sundararajan, K
Dahlstrom, M
Urteaga, M
Rodwell, M
[J]. 2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 917 - 920
[7] A W-Band GaN MMIC Continuous 90° Reflective Phase Shifter
Romano, Anthony
Sonnenberg, Timothy
Verploegh, Shane
Barton, Taylor
Popovic, Zoya
[J]. 2022 IEEE 22ND ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON), 2022,
[8] A low phase noise W-band MMIC GaN HEMT oscillator
Do, Thanh Ngoc Thi
Yan, Yu
Kuylenstierna, Dan
[J]. 2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2020, : 113 - 115
[9] W-Band Gallium Nitride MMIC Amplifiers for Cloud Doppler Radar Arrays
Fung, Andy
Samoska, Lorene
Kangaslahti, Pekka
Sadowy, Greg
Brown, Andrew
O'Connor, Shane
Gritters, Darin
[J]. 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015,
[10] W-band AlGaN/GaN MMIC PA with 3.1W Output Power
Wu Shaobing
Guo Fangjin
Gao Jianfeng
Wang Weibo
Li Zhonghui
Huang Nianning
Chen Tangsheng
[J]. 2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS), 2017, : 219 - 223

← 1 2 3 4 5 →