10 W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC

被引：1

作者：

Litchfield, Michael ^{[1
]}

Dugas, Douglas ^{[1
]}

机构：

[1] BAE Syst, Fast Labs, Nashua, NH 03060 USA

来源：

2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2021年

关键词：

D O I：

10.1109/BCICTS50416.2021.9682477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and measured performance of two high power GaN MMIC PAs operating over 17 % bandwidth in the Ka-Band are presented. The two designs achieve 10W and 30W of output power from 32 GHz to 37GHz with a PAE greater than 20 % when operating at 24 V. The PAE of the 30W PA can be increased to nearly 30 % when the drain voltage is decreased down to 15 V. Comparisons of measured performance for the larger MMIC are made at 15V, 20V, and 24 V drain voltage, demonstrating a wide range of efficient operation from 32 GHz to 37 GHz.

引用

页数：4

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