I-V characteristics of Schottky/metal-insulator-semiconductor diodes with tunnel thin barriers

被引：12

作者：

Sugimura, T ^{[1
]}

Tsuzuku, T ^{[1
]}

Kasai, Y ^{[1
]}

Iiyama, K ^{[1
]}

Takamiya, S ^{[1
]}

机构：

[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9208667, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期

关键词：

Schottky diode; MIS diode; MOS diode; ultra-thin insulating layer; tunnel current; I-V curve;

D O I：

10.1143/JJAP.39.4521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage (I-V) characteristics and their temperature dependence, of Schottky and metal-insulator-semiconductor diodes with tunnel thin insulating layers, are theoretically and experimentally studied. The effective barrier height of a Schottky diode becomes low and strongly dependent upon the applied voltage, when the impurity density of the semiconductor increases such that the tunnel current dominates the total current. The I-V curves and their temperature dependence, of the tunnel thin MIS diodes strongly reflect the characteristics of the Schottky diodes, although the insulating layers suppress the currents, depending upon their I-layers thickness.

引用

页码：4521 / 4522

页数：2

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