Modeling of the Electrical Characteristics of Spherical Metal-Insulator-Semiconductor Tunnel Structures

被引：0
|
作者：
Vexler, M. I. [1 ]
Grekhov, I. V. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2011年 / 37卷 / 11期
关键词：
EMITTER; TRANSISTOR;
D O I：
10.1134/S1063785011110149
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The potential distributions and current-voltage characteristics of a metal-insulator-semiconductor tunnel structure have been theoretically studied in the case of spherical geometry. It is established that this geometry leads to a significant change in the potential distribution and, hence, in the tunneling currents as compared to a planar case. In many other respects, the spherical structure behaves like the planar system based on a stronger doped substrate.
引用
收藏
页码：1003 / 1007
页数：5
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