I-V characteristics of Schottky/metal-insulator-semiconductor diodes with tunnel thin barriers

被引：12

作者：

Sugimura, T ^{[1
]}

Tsuzuku, T ^{[1
]}

Kasai, Y ^{[1
]}

Iiyama, K ^{[1
]}

Takamiya, S ^{[1
]}

机构：

[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9208667, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期

关键词：

Schottky diode; MIS diode; MOS diode; ultra-thin insulating layer; tunnel current; I-V curve;

D O I：

10.1143/JJAP.39.4521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage (I-V) characteristics and their temperature dependence, of Schottky and metal-insulator-semiconductor diodes with tunnel thin insulating layers, are theoretically and experimentally studied. The effective barrier height of a Schottky diode becomes low and strongly dependent upon the applied voltage, when the impurity density of the semiconductor increases such that the tunnel current dominates the total current. The I-V curves and their temperature dependence, of the tunnel thin MIS diodes strongly reflect the characteristics of the Schottky diodes, although the insulating layers suppress the currents, depending upon their I-layers thickness.

引用

页码：4521 / 4522

页数：2

共 50 条

[1] I-V characteristics of schottky/metal-insulator-semiconductor diodes with tunnel thin barriers
Sugimura, Tomoyuki
Tsuzuku, Tatsutoshi
Kasai, Yuhki
Iiyama, Kouichi
Takamiya, Saburo
2000, JJAP, Tokyo, Japan (39):
[2] I-V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures
Ui, Toshimasa
Kudo, Masahiro
Suzuki, Toshi-kazu
2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013), 2013,
[3] NON-EQUILIBRIUM C-V AND I-V CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR CAPACITORS
HIELSCHER, FH
PREIER, HM
SOLID-STATE ELECTRONICS, 1969, 12 (07) : 527 - +
[4] Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes
Hudait, MK
Krupanidhi, SB
SOLID-STATE ELECTRONICS, 2000, 44 (06) : 1089 - 1097
[5] ELECTRICAL CHARACTERISTICS OF AU/P-ALSB METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY DIODES
SADIQ, S
JOULLIE, A
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4924 - 4927
[6] ANALYSIS OF INP SCHOTTKY TUNNEL METAL-INSULATOR-SEMICONDUCTOR DIODE CHARACTERISTICS WITH A CONDUCTANCE TECHNIQUE
OUENNOUGHI, Z
BOULKROUN, K
REMY, M
HUGON, R
CUSSENOT, JR
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (05) : 1014 - 1019
[7] SWITCHING PHENOMENA IN THIN-INSULATOR METAL-INSULATOR-SEMICONDUCTOR DIODES
HAYASHI, Y
APPLIED PHYSICS LETTERS, 1980, 37 (04) : 407 - 408
[8] Series resistance calculation for the metal-insulator-semiconductor Schottky barrier diodes
Saglam, M
Ayyildiz, E
Gumus, A
Turut, A
Efeoglu, H
Tuzemen, S
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 62 (03): : 269 - 273
[9] Features of metal-insulator-semiconductor diodes with tunnel insulator subjected to UV soaking
Kilchitskaya, SS
Kilchitskaya, TS
Popova, GD
Skryshevsky, VA
THIN SOLID FILMS, 1999, 346 (1-2) : 226 - 229
[10] Features of metal-insulator-semiconductor diodes with tunnel insulator subjected to UV soaking
Radiophysics Department, Shevchenko University, Vladimirskaya 64, 252033 Kiev, Ukraine
Thin Solid Films, 1 (226-229):

← 1 2 3 4 5 →