I-V characteristics of schottky/metal-insulator-semiconductor diodes with tunnel thin barriers

被引：0

作者：

Sugimura, Tomoyuki ^{[1
]}

Tsuzuku, Tatsutoshi ^{[1
]}

Kasai, Yuhki ^{[1
]}

Iiyama, Kouichi ^{[1
]}

Takamiya, Saburo ^{[1
]}

机构：

[1] Grad. Sch. of Nat. Sci. and Technol., Kanazawa University, 2-40-20 Kodatsuno, Kanazawa, Ishikawa 920-8667, Japan

来源：

| 2000年 / JJAP, Tokyo, Japan卷 / 39期

关键词：

Characterization - Density (optical) - Electric currents - Electric potential - Experiments - Impurities - Insulating materials - Temperature distribution - Thickness control;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Current-voltage (I-V) characteristics and their temperature dependence, of Schottky and metal-insulator-semiconductor diodes with tunnel thin insulating layers, are theoretically and experimentally studied. The effective barrier height of a Schottky diode becomes low and strongly dependent upon the applied voltage, when the impurity density of the semiconductor increases such that the tunnel current dominates the total curent. The I-V curves and their temperature dependence, of the tunnel thin MIS diodes strongly reflect the characteristics of the Schottky diodes, although the insulating layers suppress the currents, depending upon their I-layers thickness.

引用

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