Parallel Simulation of Resistive Random Access Memory with Hexahedral Elements

被引：0
|
作者：
Li, Tan-Yi [1 ,2 ,3 ]
Chen, Wenchao [1 ,2 ,3 ]
Wang, Da-Wei [1 ,2 ,3 ]
Zhan, Qiwei [1 ,2 ,3 ]
Li, Guangrong [1 ,2 ,3 ]
Kang, Kai [1 ,2 ,3 ]
Yin, Wen-Yan [1 ,2 ,3 ]
机构：
[1] Zhejiang Univ, Innovat Inst Electromagnet Informat & Elect Integ, Hangzhou, Peoples R China
[2] Hangzhou Dianzi Univ, Engn Res Ctr Smart Microsensors & Microsyst MOE, Chengdu, Peoples R China
[3] Inst Appl Phys Computat Math, Software Ctr High Performance Numer Simulat CAPE, Sch Elect & Informat, Beijing, Peoples R China
来源：
2020 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO 2020) | 2020年
基金：
中国国家自然科学基金;
关键词：
Hexahedral elements; parallel simulator; resistive random access memory; thermal crosstalk;
D O I：
10.1109/NEMO49486.2020.9343644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, an in-house developed parallel-computation simulator is employed to study the electrothermal performance of resistive random access memory (RRAM). To save computing storage, the 3D hexahedral elements are used to discretize the structures. The validity of the in-house simulator is investigated first, and then the thermal crosstalk effect of RRAM array is studied base on simulation results.
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页数：3
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