Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry

被引：2
|
作者：
Xie, Deng [1 ,2 ,3 ]
Qiu, Zhi Ren [4 ,5 ]
Talwar, Devki N. [6 ]
Liu, Yi [7 ]
Song, Jen-Hao [8 ]
Huang, Jow-Lay [8 ]
Mei, Ting [9 ,10 ]
Liu, Chee Wee [2 ,3 ]
Feng, Zhe Chuan [2 ,3 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
[2] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Ctr Emerging Mat & Adv Devices, Taipei 10617, Taiwan
[4] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[5] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
[6] Indiana Univ Penn, Dept Phys, Indiana, PA 15705 USA
[7] Shenzhen Univ, Coll Phys Sci & Technol, Shenzhen 518060, Peoples R China
[8] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan
[9] Northwestern Polytech Univ, Sch Sci, Minist Educ, Key Lab Space Appl Phys & Chem, Xian 710072, Peoples R China
[10] Northwestern Polytech Univ, Sch Sci, Shaanxi Key Lab Opt Informat Technol, Xian 710072, Peoples R China
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2015年 / 12卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
BAlN film; boron aluminium nitride; co-sputtering; dielectric function; spectroscopic ellipsometry; diamond substrate; GENETIC ALGORITHMS; INVERSION;
D O I：
10.1504/IJNT.2015.066197
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents <= 3%, however, do not cause appreciable changes in its direct bandgaps.
引用
收藏
页码：97 / 110
页数：14
相关论文
共 50 条
  • [1] Optical properties of heavily boron-doped nanocrystalline diamond films studied by spectroscopic ellipsometry
    Zimmer, A.
    Williams, O. A.
    Haenen, K.
    Terryn, H.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (13)
  • [2] Optical parameters of Diamond Films Determined by Spectroscopic Ellipsometry Method
    Pan, Xiaoyu
    Wang, Linjun
    Huang, Jian
    Tang, Ke
    Bi, Mei
    Shi, Weimin
    Xia, Yiben
    [J]. RENEWABLE AND SUSTAINABLE ENERGY, PTS 1-7, 2012, 347-353 : 3468 - 3471
  • [3] Aluminium nitride thin films directly grown on conducting boron-doped nanocrystalline diamond films without using buffer layer for high frequency applications
    Das, Amal
    Rath, Martando
    Nair, Deleep R.
    Rao, M. S. Ramachandra
    DasGupta, Amitava
    [J]. MATERIALS LETTERS, 2022, 315
  • [4] Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry
    Schubert, M
    Franke, E
    Neumann, H
    Tiwald, TE
    Thompson, DW
    Woollam, JA
    Hahn, J
    [J]. THIN SOLID FILMS, 1998, 313 : 692 - 696
  • [5] Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example
    Schubert, M
    Rheinlander, B
    Franke, E
    Neumann, H
    Tiwald, TE
    Woollam, JA
    Hahn, J
    Richter, F
    [J]. PHYSICAL REVIEW B, 1997, 56 (20) : 13306 - 13313
  • [6] Investigation of boron nitride films deposited by RF magnetron sputtering with in-situ spectroscopic ellipsometry and stress measurements
    Logothetidis, S
    Charitidis, C
    Patsalas, P
    Kyprianidis, IM
    Gioti, M
    [J]. PROCEEDINGS OF THE SECOND SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1998, 97 (34): : 142 - 150
  • [7] Titanium Nitride Grown by Sputtering for Contacts on Boron-Doped Diamond
    Mortet, Vincent
    Elmazria, Omar
    Deferme, Wim
    Daenen, Michael
    D'Haen, Jan
    Lazea, Andrada
    Morel, Anne
    Haenen, Ken
    D'Olieslaeger, Marc
    [J]. PLASMA PROCESSES AND POLYMERS, 2007, 4 : S139 - S143
  • [8] Electronic transport in heavily Si doped cubic boron nitride films epitaxially grown on diamond(001)
    Yin, Hong
    Pongrac, Ivan
    Ziemann, Paul
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (02)
  • [9] Study on optical properties of diamond films by means of infrared spectroscopic ellipsometry
    Shen, HJ
    Wang, LJ
    Fang, ZJ
    Zhang, ML
    Yang, Y
    Wang, L
    Xia, YB
    [J]. ACTA PHYSICA SINICA, 2004, 53 (06) : 2009 - 2013
  • [10] Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry
    Liang, Yuanlan
    Wang, Fangze
    Luo, Xuguang
    Li, Qingxuan
    Lin, Tao
    Ferguson, Ian T.
    Yang, Qingyi
    Wan, Lingyu
    Feng, Zhe Chuan
    [J]. JOURNAL OF APPLIED SPECTROSCOPY, 2019, 86 (02) : 276 - 282
12345