Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry

被引:8
|
作者
Schubert, M
Franke, E
Neumann, H
Tiwald, TE
Thompson, DW
Woollam, JA
Hahn, J
机构
[1] Inst Surface Modificat, D-04303 Leipzig, Germany
[2] Univ Nebraska, Ctr Microelect & Opt Mat Res, Lincoln, NE 68588 USA
[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
[4] Tech Univ Chemnitz, Fac Sci, Inst Phys, D-09107 Chemnitz, Germany
关键词
infrared ellipsometry; mixed-phase thin films; anisotropy; effective medium theory;
D O I
10.1016/S0040-6090(97)00979-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We focus on the application of infrared spectroscopic ellipsometry (IRSE) to simultaneously determine phase and microstructure of mixed-phase thin films such as polymorphic-polycrystalline boron nitride (BN) thin films deposited by magnetron sputtering on (100) silicon. We discuss a recently presented microstructure-dependent model for infrared optical properties of mixed-phase thin films which contain anisotropic materials. In particular, the IRSE data are sensitive to the pure or mixed hexagonal (h) and cubic (c) BN thin film layer structure, phase composition and average grain c-axis distribution of the hexagonal phase. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:692 / 696
页数:5
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