Manufacturing technologies for a highly reliable, 0.34 um2-Cell 64 mb, and 1T1C FRAM

被引：0

作者：

Kim, J. -H. ^{[1
]}

Jung, D. J. ^{[1
]}

Kang, S. K. ^{[1
]}

Kang, Y. M. ^{[1
]}

Kim, H. H. ^{[1
]}

Kang, J. Y. ^{[1
]}

Lee, E. S. ^{[1
]}

Jung, W. W. ^{[1
]}

Joo, H. J. ^{[1
]}

Jung, J. Y. ^{[1
]}

Park, J. H. ^{[1
]}

Kim, H. ^{[1
]}

Choi, D. Y. ^{[1
]}

Lee, S. Y. ^{[1
]}

Jeong, H. S. ^{[1
]}

Kim, Kinam ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Memory Div, Technol Dev Team 2, San 24 Nongseo Dong, Yongin, Kyungki Do, South Korea

来源：

2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

64 Mb FRAM with a 1T1C scheme has progressed greatly for mass production in terms of a highly reliable device. For the first time, package-level reliabilities of the memory were evaluated systematically and massively. We scrutinized the device reliabilities in accelerated manners, one of which is high-temperature-operating-life (HTOL) test; and the other is high-temperature-storage (HTS) test. Random-single-bit failures appeared from the tests were not attributed to intrinsic causes but extrinsic ones. The extrinsic mostly come from poor interconnections between a cell capacitor and its near-contact nodes. As a result of applying novel schemes to remove the analyzed defectives, we have the FRAM with no bit failure up to 1000 hours over both HTOL and HTS tests.

引用

页码：511 / +

页数：3

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