Manufacturing technologies for a highly reliable, 0.34 um2-Cell 64 mb, and 1T1C FRAM

被引：0
|
作者：
Kim, J. -H. [1 ]
Jung, D. J. [1 ]
Kang, S. K. [1 ]
Kang, Y. M. [1 ]
Kim, H. H. [1 ]
Kang, J. Y. [1 ]
Lee, E. S. [1 ]
Jung, W. W. [1 ]
Joo, H. J. [1 ]
Jung, J. Y. [1 ]
Park, J. H. [1 ]
Kim, H. [1 ]
Choi, D. Y. [1 ]
Lee, S. Y. [1 ]
Jeong, H. S. [1 ]
Kim, Kinam [1 ]
机构：
[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Memory Div, Technol Dev Team 2, San 24 Nongseo Dong, Yongin, Kyungki Do, South Korea
来源：
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
64 Mb FRAM with a 1T1C scheme has progressed greatly for mass production in terms of a highly reliable device. For the first time, package-level reliabilities of the memory were evaluated systematically and massively. We scrutinized the device reliabilities in accelerated manners, one of which is high-temperature-operating-life (HTOL) test; and the other is high-temperature-storage (HTS) test. Random-single-bit failures appeared from the tests were not attributed to intrinsic causes but extrinsic ones. The extrinsic mostly come from poor interconnections between a cell capacitor and its near-contact nodes. As a result of applying novel schemes to remove the analyzed defectives, we have the FRAM with no bit failure up to 1000 hours over both HTOL and HTS tests.
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页码：511 / +
页数：3
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