Future 1T1C FRAM technologies for highly reliable, high density FRAM

被引：0
|
作者：
Lee, SY [1 ]
Kim, K [1 ]
机构：
[1] Samsung Elect Co Ltd, Memory Div, Semicond R&D Ctr, Adv Technol Dev, Yonsin Si, Kyungki Do, South Korea
来源：
INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Recent 32Mb FRAM technologies realizing 0.25 mum/15F2 cell are introduced and key integration technologies for future highly reliable, high density FRAM are suggested. Etchless capacitor technology and MOCVD PZT technology are the promising solutions for realizing future highly reliable, high density FRAM beyond 32Mb density.
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收藏
页码：547 / 550
页数：4
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