A study on the minority carrier diffusion length in n-type GaN films

被引：4
|
作者：
Deng Dongmei [1 ]
Zhao Degang
Wang Jinyan
Yang Hui
Wen Cheng Paul
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
RARE METALS | 2007年 / 26卷 / 03期
关键词：
compound semiconductor material; minority carrier diffusion length; photovoltaic spectrum; GaN;
D O I：
10.1016/S1001-0521(07)60213-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.
引用
收藏
页码：271 / 275
页数：5
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