共 50 条
- [1] THEORETICAL-STUDY OF MINORITY-CARRIER LIFETIMES DUE TO AUGER RECOMBINATION IN N-TYPE SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A): : 3054 - 3058
- [4] EXCESS CARRIER LIFETIME IN N-TYPE HG1-XCDXTE DUE TO AUGER RECOMBINATION BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (12): : 1677 - &
- [5] ON THE MEASUREMENT OF MINORITY CARRIER LIFETIME IN N-TYPE SILICON PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (03): : 121 - 129
- [9] IMPURITY AUGER RECOMBINATION IN N-TYPE GASB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 468 - 469