A study on the minority carrier diffusion length in n-type GaN films

被引：4
|
作者：
Deng Dongmei [1 ]
Zhao Degang
Wang Jinyan
Yang Hui
Wen Cheng Paul
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
RARE METALS | 2007年 / 26卷 / 03期
关键词：
compound semiconductor material; minority carrier diffusion length; photovoltaic spectrum; GaN;
D O I：
10.1016/S1001-0521(07)60213-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.
引用
收藏
页码：271 / 275
页数：5
相关论文
共 50 条
  • [31] Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current
    Ootsuka, Teruhisa
    Suemasu, Takashi
    Chen, Jun
    Sekiguchi, Takashi
    APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [32] Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy
    Kanegae, Kazutaka
    Horita, Masahiro
    Kimoto, Tsunenobu
    Suda, Jun
    APPLIED PHYSICS EXPRESS, 2018, 11 (07)
  • [33] INFLUENCE OF ANNEALING ON THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS IN N-TYPE SIC(6H)
    BALLANDOVICH, VS
    VIOLINA, GN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 959 - 960
  • [34] Role of dislocation scattering in n-type GaN films
    Ng, H.M.
    Doppalapudi, D.
    Moustakas, T.D.
    Weimann, N.G.
    Eastman, L.F.
    Applied Physics Letters, 1998, 73 (06):
  • [35] Photocurrent decay in n-type GaN thin films
    Appl Phys Lett, 9 (1282):
  • [36] The role of dislocation scattering in n-type GaN films
    Ng, HM
    Doppalapudi, D
    Moustakas, TD
    Weimann, NG
    Eastman, LF
    APPLIED PHYSICS LETTERS, 1998, 73 (06) : 821 - 823
  • [37] Yellow luminescence in n-type GaN epitaxial films
    Chen, HM
    Chen, YF
    Lee, MC
    Feng, MS
    PHYSICAL REVIEW B, 1997, 56 (11): : 6942 - 6946
  • [38] Photocurrent decay in n-type GaN thin films
    Qiu, CH
    Melton, W
    Leksono, MW
    Pankove, JI
    Keller, BP
    DenBaars, SP
    APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1282 - 1284
  • [39] Determination of carrier diffusion length in GaN
    Hafiz, Shopan
    Zhang, Fan
    Monavarian, Morteza
    Avrutin, Vitaliy
    Morkoc, Hadis
    Ozgur, Umit
    Metzner, Sebastian
    Bertram, Frank
    Christen, Juergen
    Gil, Bernard
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (01)
  • [40] MEASUREMENT OF THE MINORITY-CARRIER DIFFUSION LENGTH IN THIN SEMICONDUCTOR-FILMS
    CHIANG, CL
    SCHWARZ, R
    SLOBODIN, DE
    KOLODZEY, J
    WAGNER, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1587 - 1592
12345