New approach on logic application of ferroelectric random access memory technology

被引:0
|
作者
Takayama, M [1 ]
Koyama, S [1 ]
Nozawa, H [1 ]
机构
[1] Kyoto Univ, Grad Sch Energy Sci, Sakyo Ku, Kyoto 6068501, Japan
关键词
ferroelectric; RSA cryptography; AND gate; circuits; binomial theorem;
D O I
10.1143/JJAP.41.6844
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, a new approach is described to solve some problems that occur when ferroelectric random access memory (FeRAM) is applied to logic circuits, particularly RSA cryptography. Application of a programmable switch device to RSA-based cryptography processing circuits was explored. RSA-based cryptography processing circuits have been designed as code conversion circuits. The capacity of the code conversion programmable AND gate and FeRAM and the translation rate have been investigated as a function of bit length. As a result, a problem of huge capacity at the practical bit length can be predicted theoretically. To solve this problem, we propose a new scheme for circuits and a new algorithm of logic operation using the binomial theorem. [DOI: 10.1143/JJAP.41.6844]
引用
收藏
页码:6844 / 6847
页数:4
相关论文
共 50 条
  • [31] Study of optimization guidelines on nitrogen concentration in nitrided oxide for logic and dynamic random access memory application
    Jung, JW
    Park, SK
    Yoon, GH
    Kang, DK
    Lee, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B): : 2203 - 2207
  • [32] Etch characteristics of CeO2 thin films as a buffer layer for the application of ferroelectric random access memory
    Oh, CS
    Kim, CI
    Kwon, KH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04): : 1068 - 1071
  • [33] A Reliability-boosted Ferroelectric Random Access Memory with Random-dynamic Reference Cells
    Jia, Ze
    Liu, Jizhi
    Liu, Zhiwei
    Liu, Haiyang
    Liou, Juin J.
    Yang, Wei
    Zhao, Junfeng
    2014 IEEE 6TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2014,
  • [34] Resistive random access memory and its applications in storage and nonvolatile logic
    Dongbin Zhu
    Yi Li
    Wensheng Shen
    Zheng Zhou
    Lifeng Liu
    Xing Zhang
    Journal of Semiconductors, 2017, 38 (07) : 22 - 34
  • [35] Resistive random access memory and its applications in storage and nonvolatile logic
    Dongbin Zhu
    Yi Li
    Wensheng Shen
    Zheng Zhou
    Lifeng Liu
    Xing Zhang
    Journal of Semiconductors, 2017, (07) : 22 - 34
  • [36] Low-Power Ferroelectric Random Access Memory Embedded in 180nm Analog Friendly CMOS Technology
    Udayakumar, K. R.
    San, T.
    Rodriguez, J.
    Chevacharoenkul, S.
    Frystak, D.
    Rodriguez-Latorre, J.
    Zhou, C.
    Ball, M.
    Ndai, P.
    Madan, S.
    McAdams, H.
    Summerfelt, S.
    Moise, T.
    2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), 2013, : 128 - 131
  • [37] New approach for random multiple access
    Zagursky, V
    Zarumba, D
    Proceedings of the Third IASTED International Conference on Communications and Computer Networks, 2005, : 302 - 307
  • [38] Ferroelectric Random Access Memories
    Ishiwara, Hiroshi
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (10) : 7619 - 7627
  • [39] Proposal for 1T/1C ferroelectric random access-memory with multiple storage and application to functional memory
    Kato, H
    Nozawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9B): : 5998 - 6002
  • [40] A NEW TECHNOLOGY FOR RANDOM-ACCESS SAMPLING
    DIEBLER, H
    HERRON, R
    UFFENHEIMER, K
    SVENJAK, D
    SMITH, J
    CLINICAL CHEMISTRY, 1982, 28 (07) : 1611 - 1611