Low-Power Ferroelectric Random Access Memory Embedded in 180nm Analog Friendly CMOS Technology

被引：0

作者：

Udayakumar, K. R. ^{[1
]}

San, T. ^{[1
]}

Rodriguez, J. ^{[1
]}

Chevacharoenkul, S. ^{[1
]}

Frystak, D. ^{[1
]}

Rodriguez-Latorre, J. ^{[1
]}

Zhou, C. ^{[1
]}

Ball, M. ^{[1
]}

Ndai, P. ^{[1
]}

Madan, S. ^{[1
]}

McAdams, H. ^{[1
]}

Summerfelt, S. ^{[1
]}

Moise, T. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2013年

关键词：

Ferroelectric; non-volatile memory; 180nm analog CMOS; PZT; process integration; reliability;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

An embedded 448kb 2T-2C FRAM, integrated into a 180nm analog process flow, has been developed and qualified for more than 10years data retention at 125 degrees C. Key electrical characteristics of the memory include wide signal margins with no outlier bits, high endurance write/read cycling (>>10(15) cycles), stable retention (>>10yrs at 125 degrees C), and extremely low bit error rate following 260 degrees C Pb-free solder board-attach reflow. Results suggest that the technology can find wide use in applications ranging from consumer electronics to automotive where highly reliable embedded memory and analog components are required.

引用

页码：128 / 131

页数：4

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