Carrier lifetime extraction from a 6H-SiC high voltage p-i-n rectifier reverse recovery waveform

被引：12
|
作者：
Ramungul, N [1 ]
Khemka, V
Chow, TP
Ghezzo, M
Kretchmer, J
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
[2] GE, Corp Res & Dev, Schenectady, NY 12301 USA
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
carrier lifetime; reverse recovery; high-level injection; ambipolar lifetime; Auger recombination; space-charge limited current;
D O I：
10.4028/www.scientific.net/MSF.264-268.1065
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we report the extraction of carrier lifetimes of GH-SIC P-i-N rectifiers under high-level injection from reverse recovery measurements. Studies of carrier lifetime at different operating temperatures and injection levels show that the Auger recombination is the dominant process during high-level injection. An Auger coefficient of 2.5 similar to 3.5 x 10(-29)cm(6)/s has been estimated from the extracted high-level recombination lifetime.
引用
收藏
页码：1065 / 1068
页数：4
相关论文
共 50 条
  • [1] Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
    Fujihira, K
    Tamura, S
    Kimoto, T
    Matsunami, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (01) : 150 - 154
  • [2] Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method
    Dutta, Maitreya
    Mandal, Saptarshi
    Hathwar, Raghuraj
    Fischer, Alec M.
    Koeck, Franz A. M.
    Nemanich, Robert J.
    Goodnick, Stephen M.
    Chowdhury, Srabanti
    [J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (04) : 552 - 555
  • [3] HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES
    MATUS, LG
    POWELL, JA
    SALUPO, CS
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1770 - 1772
  • [4] Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity
    Torvik, JT
    Pankove, JI
    Van Zeghbroeck, BJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1326 - 1331
  • [5] Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime
    Kaji, Naoki
    Suda, Jun
    Kimoto, Tsunenobu
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (09)
  • [6] Assessment of the effective carrier lifetime in a SOI p-i-n diode Si modulator using the reverse recovery method
    Zheng, D. W.
    Smith, B. Thomas
    Asghari, M.
    [J]. SILICON PHOTONICS II, 2007, 6477
  • [7] High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes
    Shenoy, PM
    Baliga, BJ
    [J]. ELECTRONICS LETTERS, 1997, 33 (12) : 1086 - 1087
  • [8] Study of 6H-SiC high voltage bipolar diodes under reverse biases
    Isoird, K
    Lazar, M
    Ottaviani, L
    Locatelli, ML
    Raynaud, C
    Planson, D
    Chante, JP
    [J]. APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 477 - 482
  • [9] ANALYSIS OF A HIGH-VOLTAGE MERGED P-I-N SCHOTTKY (MPS) RECTIFIER
    BALIGA, BJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 407 - 409
  • [10] Minimization of reverse recovery charge and forward voltage of silicon p-i-n diodes
    Yamashita, Yusuke
    Machida, Satoru
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
12345