Damascene metal gate for 70nm CMOS process

被引：0

作者：

Guillaumot, B ^{[1
]}

Ducroquet, F ^{[1
]}

Ernst, T ^{[1
]}

Guegan, G ^{[1
]}

Galon, C ^{[1
]}

Renard, C ^{[1
]}

Prévitali, B ^{[1
]}

Rivoire, M ^{[1
]}

Nier, ME ^{[1
]}

Tedesco, S ^{[1
]}

Fargeot, T ^{[1
]}

Achard, H ^{[1
]}

Deleopibus, S ^{[1
]}

机构：

[1] CEA, LETI, DTS, F-38054 Grenoble, France

来源：

SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 | 2002年 / 2002卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：793 / 802

页数：10

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