70nm DRAM technology for DDR-3 application

被引：0

作者：

Kim, H ^{[1
]}

Kim, S ^{[1
]}

Lee, S ^{[1
]}

Jang, S ^{[1
]}

Kim, JH ^{[1
]}

Sung, Y ^{[1
]}

Park, J ^{[1
]}

Kwon, S ^{[1
]}

Jun, S ^{[1
]}

Park, W ^{[1
]}

Han, D ^{[1
]}

Cho, C ^{[1
]}

Kim, Y ^{[1
]}

Kim, K ^{[1
]}

Ryu, B ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Device Solut Network, Memory Div, Adv Technol Dev Team, Yongin, Kyungki Do, South Korea

来源：

2005 IEEE VLSI-TSA INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TSA-TECH), PROCEEDINGS OF TECHNICAL PAPERS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we developed 70nm DRAM technology applicable to a manufacturing level. This technology is aimed at DDR-3 application, which requires low-voltage operation and high speed performance. Fully working 70nm DRAMs were realized combining W-gate dual poly process, Recess-Channel-Array-Transistors (RCATs), and MIM cell capacitor module. In this paper, we present performance of 70nm node DRAMs which qualifies DDR-3 application requirement.

引用

页码：29 / 30

页数：2

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