A long data retention SOI-DRAM with the body refresh function

被引：0
|
作者：
Tomishima, S [1 ]
Morishita, F [1 ]
Tsukude, M [1 ]
Yamagata, T [1 ]
Arimoto, K [1 ]
机构：
[1] MITSUBISHI ELECTR CORP,ULSI LAB,ITAMI,HYOGO 664,JAPAN
来源：
1996 SYMPOSIUM ON VLSI CIRCUITS - DIGEST OF TECHNICAL PAPERS | 1996年
关键词：
D O I：
10.1109/VLSIC.1996.507770
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：198 / 199
页数：2
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