An approach for pre-silicon power modeling

被引：0

作者：

Agrawal, Prashant ^{[1
]}

Srinivasa, R. S. T. G. ^{[2
]}

Oke, Ajit N. ^{[2
]}

Vijay, Saurabh ^{[2
]}

机构：

[1] Indian Inst Technol, CSE, Kharagpur 721302, W Bengal, India

[2] Intel Technol IP Ltd, MG I, Bangalore 560037, Karnataka, India

来源：

ICCTA 2007: INTERNATIONAL CONFERENCE ON COMPUTING: THEORY AND APPLICATIONS, PROCEEDINGS | 2007年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

Accurate estimation of power in pre-silicon is very important and finally to validate this against post-silicon measurement is essential throughout product lifecycle. Thermal Design Power (TDP)(1) estimates are used to design package thermal solutions. In this paper a modeling approach for dynamic power estimation under TDP conditions is proposed. In this approach, separate models are built for each partition in the design. The model uses only bandwidth and the effective toggle rate of the input data for estimating the total switched capacitance and dynamic power. The model takes into account the effect of cross-coupling capacitance on dynamic power The results obtained from the model are within 7% of the measured data.

引用

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页码：99 / +

页数：2

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