SiO2-Al2O3 thick film;
fine patterning;
sol-gel process;
D O I:
10.1016/j.apsusc.2006.12.106
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Organic-inorganic composite SiO2-A1(2)O(3) films have been prepared by sol-gel using methacryloxypropyl trimethoxysilane and aluminum sec-butoxide as the precursors. By introduction of organic groups into the inorganic backbone, the smooth and crack-free films could be readily achieved by a one-step dip-coating process, with the thickness up to 4.6 mu m after being post-baked at 200 degrees C for 2 h. The films presented in an amorphous phase with an acceptable chemical homogeneity. Owing to the formation of chelate rings, the gel films showed a strong photosensitivity to ultraviolet light at 325 nm. The uniform fine patterns of SiO2-Al2O3 thick films could be well defined by ultraviolet light imprinting simply using a mask. These performances of SiO2-Al2O3 films indicate the potential for integrated optical systems. (C) 2007 Elsevier B.V. All rights reserved.
机构:
Univ Arizona, Mat Sci & Engn, 1235 James E Rogers Way,Mines Bldg, Tucson, AZ 85721 USA
Missouri Univ Sci & Technol, Dept Mat Sci & Engn, Rolla, MO 65401 USAUniv Arizona, Mat Sci & Engn, 1235 James E Rogers Way,Mines Bldg, Tucson, AZ 85721 USA
Rao, Pratish R.
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机构:
Muralidharan, Krishna
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机构:
Momayez, Moe
Runge, Keith
论文数: 0引用数: 0
h-index: 0
机构:
Univ Arizona, Mat Sci & Engn, 1235 James E Rogers Way,Mines Bldg, Tucson, AZ 85721 USAUniv Arizona, Mat Sci & Engn, 1235 James E Rogers Way,Mines Bldg, Tucson, AZ 85721 USA