Synthesis and fine patterning of organic-inorganic composite SiO2-Al2O3 thick films

被引:14
|
作者
Liang, Q. L. [1 ]
Zhao, G. Y.
Lu, J. G.
机构
[1] Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China
[2] Semicond Mfg Int Corp, Qual Engn Div, Shanghai 201203, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
SiO2-Al2O3 thick film; fine patterning; sol-gel process;
D O I
10.1016/j.apsusc.2006.12.106
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Organic-inorganic composite SiO2-A1(2)O(3) films have been prepared by sol-gel using methacryloxypropyl trimethoxysilane and aluminum sec-butoxide as the precursors. By introduction of organic groups into the inorganic backbone, the smooth and crack-free films could be readily achieved by a one-step dip-coating process, with the thickness up to 4.6 mu m after being post-baked at 200 degrees C for 2 h. The films presented in an amorphous phase with an acceptable chemical homogeneity. Owing to the formation of chelate rings, the gel films showed a strong photosensitivity to ultraviolet light at 325 nm. The uniform fine patterns of SiO2-Al2O3 thick films could be well defined by ultraviolet light imprinting simply using a mask. These performances of SiO2-Al2O3 films indicate the potential for integrated optical systems. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:5442 / 5446
页数:5
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