Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

被引：10
|
作者：
Yafune, Norimasa [1 ,3 ]
Nagamori, Motoi [2 ]
Chikaoka, Hironari [2 ]
Watanabe, Fuminao [2 ]
Sakuno, Keiichi [1 ]
Kuzuhara, Masaaki [2 ]
机构：
[1] Sharp Co Ltd, Nara 6328567, Japan
[2] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan
[3] Japan Res & Dev Ctr Met, Minato Ku, Tokyo 1050003, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
关键词：
N-TYPE GAN; HETEROSTRUCTURES; RESISTANCE; TI/AL/MO/AU; MECHANISM; MO/AL/MO/AU; LAYER;
D O I：
10.1143/JJAP.49.04DF10
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the electrical characteristics of V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure field effect transistors (HFETs). A minimum ohmic contact resistivity of 1.6 x 10(-6) Omega cm(2) was achieved after annealing at 550 degrees C by optimizing V thickness to 15 nm. Cross-sectional transmission electron microscope (TEM) images exhibited a large difference in the extent of metal reaction between V/Al/Mo/Au and Ti/Al/Mo/Au. In addition to their lower contact resistivities, the low-temperature annealed V/Al/Mo/Au ohmic contacts exhibited better characteristics, such as enhanced breakdown voltages by about 100 V and smooth surface morphology, than the Ti/Al/Mo/Au ohmic contact annealed at the optimum annealing temperature. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [31] LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING
    LOVEJOY, ML
    HOWARD, AJ
    ZAVADIL, KR
    RIEGER, DJ
    SHUL, RJ
    BARNES, PA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 758 - 762
  • [32] Ohmic contact formation mechanism of Ta/Al/Mo/Au and Ti/Al/Mo/Au metallizations on AlGaN/GaN HEMTs
    Mohammed, FM
    Wang, L
    Selvanathan, D
    Hu, H
    Adesida, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : 2330 - 2335
  • [33] Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN
    Kumar, V
    Zhou, L
    Selvanathan, D
    Adesida, I
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) : 1712 - 1714
  • [34] Low-resistance ohmic contacts to AlGaN/GaN heterostructure using Si/Ti/Al/Cu/Au multilayer metal scheme
    Youn, CJ
    Kang, KY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7A): : 3955 - 3956
  • [35] OHMIC CONTACTS TO LOW-RESISTIVITY ZNS - PREPARATION, NOISE PROPERTIES AND NATURE OF CONTACT RESISTANCE
    LUKYANCHIKOVA, NB
    PEKAR, GS
    TKACHENKO, NN
    SHIN, HM
    SHEINKMAN, MK
    SOLID-STATE ELECTRONICS, 1977, 20 (11) : 879 - 882
  • [36] Ti/Al/Ti/TiW Au-free low temperature ohmic contacts for un-doped AlGaN/GaN HEMTs
    Li, Qixin
    Zhou, Quanbin
    Gao, Sheng
    Liu, Xiaoyi
    Wang, Hong
    SOLID-STATE ELECTRONICS, 2018, 147 : 1 - 5
  • [37] Low-resistance ohmic contacts to AlGaN/GaN heterostructure using Si/Ti/Al/Cu/Au multilayer metal scheme
    Youn, Chang-Joo
    Kang, Kwang-Yong
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 2000, 39 (7 A): : 3955 - 3956
  • [38] Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure
    Lee, Jaesun
    Yan, Minjun
    Ofuonye, Benedict
    Jang, Jaehyung
    Gao, X.
    Guo, Shiping
    Adesida, Ilesanmi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07): : 1538 - 1540
  • [39] V/Al/V/Ag Ohmic contacts to n-AlGaN/GaN heterostructures with a thin GaN cap
    Miller, M. A.
    Mohney, S. E.
    APPLIED PHYSICS LETTERS, 2007, 91 (01)
  • [40] Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization
    Qiao, D
    Guan, ZF
    Carlton, J
    Lau, SS
    Sullivan, GJ
    APPLIED PHYSICS LETTERS, 1999, 74 (18) : 2652 - 2654
12345