Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN

被引：115
|
作者：
Kumar, V
Zhou, L
Selvanathan, D
Adesida, I
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 03期
关键词：
D O I：
10.1063/1.1491584
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to n-GaN. Excellent ohmic characteristics with a specific contact resistivity as low as 4.7x10(-7) Omega-cm(2) were obtained by rapid thermal annealing of evaporated Ti/Al/Mo/Au at 850 degreesC for 30 sec in a N-2 ambient. Additionally, no degradation in specific contact resistivity was observed for these contacts subjected to long-term annealing at 500 degreesC for 360 h. (C) 2002 American Institute of Physics.
引用
收藏
页码：1712 / 1714
页数：3
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