LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING

被引：6
|
作者：
LOVEJOY, ML [1 ]
HOWARD, AJ [1 ]
ZAVADIL, KR [1 ]
RIEGER, DJ [1 ]
SHUL, RJ [1 ]
BARNES, PA [1 ]
机构：
[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期
关键词：
D O I：
10.1116/1.579822
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：758 / 762
页数：5
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