LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING

被引：6
|
作者：
LOVEJOY, ML [1 ]
HOWARD, AJ [1 ]
ZAVADIL, KR [1 ]
RIEGER, DJ [1 ]
SHUL, RJ [1 ]
BARNES, PA [1 ]
机构：
[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期
关键词：
D O I：
10.1116/1.579822
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：758 / 762
页数：5
相关论文
共 50 条
  • [21] Low-resistance ohmic contact to n-GaAs
    Vald-Perlov, VM
    Veitz, VV
    12TH INTERNATIONAL CONFERENCE - MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS, 2002, : 161 - 162
  • [22] LOW-TEMPERATURE ELECTROPLATED AU-SNNI-AU OHMIC CONTACTS ON N-TYPE GAAS
    KELLY, WM
    WRIXON, GT
    ELECTRONICS LETTERS, 1978, 14 (04) : 80 - 81
  • [23] REPRODUCIBLE LOW-RESISTIVITY AUMN OHMIC CONTACT FOR PARA-TYPE GAAS
    DUBONCHEVALLIER, C
    DUCHENOIS, AM
    BRESSE, JF
    ANKRI, D
    ELECTRONICS LETTERS, 1985, 21 (14) : 614 - 615
  • [24] Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures
    Yafune, Norimasa
    Nagamori, Motoi
    Chikaoka, Hironari
    Watanabe, Fuminao
    Sakuno, Keiichi
    Kuzuhara, Masaaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [25] OHMIC CONTACTS TO LOW-RESISTIVITY ZNS - PREPARATION, NOISE PROPERTIES AND NATURE OF CONTACT RESISTANCE
    LUKYANCHIKOVA, NB
    PEKAR, GS
    TKACHENKO, NN
    SHIN, HM
    SHEINKMAN, MK
    SOLID-STATE ELECTRONICS, 1977, 20 (11) : 879 - 882
  • [26] Generation of VGaTeAsVAs complexes in low-temperature annealing of tellurium-doped n-GaAs crystals
    Glinchuk, KD
    Prokhorovich, AV
    CRYSTALLOGRAPHY REPORTS, 1998, 43 (06) : 1042 - 1045
  • [27] LOW-TEMPERATURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF INGAAS FOR A NONALLOYED OHMIC CONTACT TO N-GAAS
    WATANABE, N
    NITTONO, T
    ITO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (3A): : L271 - L274
  • [28] Rhenium-based low resistivity and low annealing temperature ohmic contacts to n-GaN
    Shah, Amit P.
    Chalke, Bhagyashree A.
    Mhatre, Vilas J.
    Bhattacharya, Arnab
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (07)
  • [29] STABLE AND SHALLOW PDLN OHMIC CONTACTS TO N-GAAS
    WANG, LC
    WANG, XZ
    LAU, SS
    SANDS, T
    CHAN, WK
    KUECH, TF
    APPLIED PHYSICS LETTERS, 1990, 56 (21) : 2129 - 2131
  • [30] Properties of Pd/Sn Ohmic contacts on n-GaAs
    Islam, MS
    McNally, PJ
    Cameron, DC
    Herbert, PAF
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 1998, 77 (1-3) : 42 - 49
12345