Low-resistance ohmic contact to n-GaAs

被引：0
|
作者：
Vald-Perlov, VM [1 ]
Veitz, VV [1 ]
机构：
[1] Pulsar GUP NPP, Moscow 105187, Russia
来源：
12TH INTERNATIONAL CONFERENCE - MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/CRMICO.2002.1137189
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A multi-layered AuGe-Ti-TiN-Ti-Au metallization has been researched to develop a low-resistance ohmic contact to n-GaAs. The value of the obtained specific contact resistance was (4.1divided by5.6) . 10(-7) Ohm.cm and retained its stability after a five-hour treatment at 300 degreesC.
引用
收藏
页码：161 / 162
页数：2
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