Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

被引：10
|
作者：
Yafune, Norimasa [1 ,3 ]
Nagamori, Motoi [2 ]
Chikaoka, Hironari [2 ]
Watanabe, Fuminao [2 ]
Sakuno, Keiichi [1 ]
Kuzuhara, Masaaki [2 ]
机构：
[1] Sharp Co Ltd, Nara 6328567, Japan
[2] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan
[3] Japan Res & Dev Ctr Met, Minato Ku, Tokyo 1050003, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
关键词：
N-TYPE GAN; HETEROSTRUCTURES; RESISTANCE; TI/AL/MO/AU; MECHANISM; MO/AL/MO/AU; LAYER;
D O I：
10.1143/JJAP.49.04DF10
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the electrical characteristics of V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure field effect transistors (HFETs). A minimum ohmic contact resistivity of 1.6 x 10(-6) Omega cm(2) was achieved after annealing at 550 degrees C by optimizing V thickness to 15 nm. Cross-sectional transmission electron microscope (TEM) images exhibited a large difference in the extent of metal reaction between V/Al/Mo/Au and Ti/Al/Mo/Au. In addition to their lower contact resistivities, the low-temperature annealed V/Al/Mo/Au ohmic contacts exhibited better characteristics, such as enhanced breakdown voltages by about 100 V and smooth surface morphology, than the Ti/Al/Mo/Au ohmic contact annealed at the optimum annealing temperature. (C) 2010 The Japan Society of Applied Physics
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页数：4
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