EMC analysis of high-speed on-chip interconnects via a mixed quasi-static finite difference - FEM technique

被引：7
|
作者：
Yioultsis, Traianos V. [1 ]
Kosmanis, Theodoros I.
Rekanos, Ioannis T.
Tsiboukis, Theodoros D.
机构：
[1] Aristotle Univ Thessaloniki, Dept Elect & Comp Engn, GR-54124 Thessaloniki, Greece
[2] Inst Educ Technol, Dept Informat & Commun, GR-62124 Serres, Greece
[3] Aristotle Univ Thessaloniki, Sch Engn, Div Phys, GR-54124 Thessaloniki, Greece
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2007年 / 43卷 / 04期
关键词：
finite difference methods; finite element methods (FEMs); integrated circuit interconnections; transmission lines;
D O I：
10.1109/TMAG.2006.891010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a new technique to investigate electromagnetic compatibility/electromagnetic interference (EMC/EMI) interactions in high-speed transmission lines on the chip level. The time-domain method is based on the different nature of the problem in conductors and semiconductors, compared to the insulating media that separate them. Therefore, the static problem in the silicon oxide is separated from the diffusion problem in conductors. The latter one is solved by an efficient DuFort-Frankel technique, while the static problem is solved in a coarse finite element method (FEM) mesh. In each step, the two problems are appropriately coupled by means of the interface conditions. The time-domain nature of this method permits the use of proper fast Fourier transform (FFT)-based postprocessing procedures to calculate the per unit length parameters in a fast and efficient manner.
引用
收藏
页码：1365 / 1368
页数：4
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