A resonant gate drive circuit with reduced MOSFET switching and gate losses

被引：0

作者：

Eberle, Wilson ^{[1
]}

Liu, Yan-Fei ^{[1
]}

Sen, P. C. ^{[1
]}

机构：

[1] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada

来源：

IECON 2006 - 32ND ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS, VOLS 1-11 | 2006年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a new resonant gate drive circuit is proposed for power MOSFETs. The proposed circuit achieves quick turn on and turn off transition times to reduce switching loss and conduction loss in power MOSFETS. In addition, it can recover a portion of the CV2 gate energy normally dissipated in a conventional driver. The circuit consists of four control switches and a small resonant inductance. The current through the resonant inductance is discontinuous in order to minimize circulating current conduction loss. Experimental results are presented for the proposed driver operating in a boost converter at 1MHz. At 5V gate drive, 4% efficiency improvement is achieved. At 12V gate drive, 6.5% efficiency improvement is achieved.

引用

页码：4133 / +

页数：2

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