Switching Transients in Gate Drive Loops of Hybrid GaN HEMTs and SiC MOSFET

Wide-Bandgap devices are believed to be promising candidates for the next-generation power electronics converter. However, the prohibitive cost and limited variety are still the main constrains before being widely used. One possible solution to mitigate these issues is hybrid switches, a combination of Si MOSFETs and WBG devices. To maximize merits of both GaN HEMT and Si MOSFET, this paper proposes a hybrid switch consisting of two GaN HEMTs and two Si MOSFETs. For such a design, a robust gate-drive loop is critical to secure the safe operation of all switches. As an instructive work, this paper presents a comprehensive analysis of the switching transient process and its impact on the gate-drive loop, practical tuning tips of gate-drive loop design are also given based on the simulation and experimental results. A 400V/80A full bridge prototype is developed to validate our design. Experimental result shows that, with enhanced gate-drive loop, we can continuously turn off 400V/80A@100kHz and 400V/40A@300kHz with only one GaN device paralleled to two commercial Si MOSFETs.