A new resonant gate drive circuit utilizing leakage inductance of transformer

被引：0
|
作者：
Xu, Kai [1 ]
Liu, Yan-Fei [1 ]
Sen, P. C. [1 ]
机构：
[1] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada
来源：
IECON 2006 - 32ND ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS, VOLS 1-11 | 2006年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a new resonant gate drive circuit that utilizes transformer leakage inductance as resonant component. The new gate driver circuit can drive a pair of MOSFETs, which can be used in both with same reference and different reference circuits such as mosfets in buck, bridge converters. Pulse controlled resonance is used to reduce the conduction loss of resonant circuit. Also it provides fast transition, thus the limitation on the duty cycle is minimized. In the paper, the theoretical analysis and simulation waveforms are provided. A prototype board is built and experimental results are also given.
引用
收藏
页码：4534 / +
页数：2
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